File Name: rf mems switches and integrated switching circuits .zip
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Suganthi I ; K. Murugesan II ; S. Raghavan III. Email: sugi yahoo. The double beam structure has been analyzed in terms of its return, isolation and insertion losses with the variation of its passive circuit component values. The effect of design parameters has been analyzed and the lateral switch was realized with low insertion loss, high return and isolation losses.
Skip to search form Skip to main content You are currently offline. Some features of the site may not work correctly. DOI: Liu and A. Yu and M. Karim and M. Liu , A.
It is designed on high-resistivity silicon substrate and has a compact area of 1. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. Microelectromechanical Systems MEMS with their extremely small dimensions and full integration into the Radio Frequency RF front ends of various telecommunication devices have emerged as the most promising technology over the past few decades.
Presents RF Switches and switching circuit MEMS devices in a unified framework Included format: EPUB, PDF; ebooks can be used on all reading devices.
Radio frequency microelectromechanical system RF-MEMS switches have demonstrated superior electrical performance lower loss and higher isolation compared to semiconductor-based devices to implement reconfigurable microwave and millimeter mm -wave circuits. In this chapter, electrostatically actuated RF-MEMS switch configurations that can be easily integrated in uniplanar circuits are presented. The design procedure and fabrication process of RF-MEMS switch topologies able to control the propagating modes of multimodal uniplanar structures those based on a combination of coplanar waveguide CPW , coplanar stripline CPS , and slotline will be described in detail.