File Name: electrical and optical properties of tio2 anatase thin films .zip
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Yaser M. Box , Safat , Kuwait. Titanium dioxide thin films were deposited on crystalline silicon substrates by electron beam physical vapor deposition. Samples were then annealed at high temperatures ranging from C to C for 4 hours under nitrogen, and their structural and optical properties along with their chemical structure were characterized before and after annealing. The chemical and structural characterization revealed a substoichiometric film with oxygen vacancies, voids, and an interface oxide layer. It was found from X-ray diffraction that the deposited films were amorphous and crystallization to anatase phase occurred for annealed samples and was more pronounced for annealing temperatures above C.
The X-ray diffraction XRD analysis was used to examine the structure and to determine the crystallite size of TiO 2 thin film. Optical constants such as band gap, refractive index, extinction coefficient and electric susceptibility were determined. The dielectric properties of TiO 2 thin films were studied for different frequencies and different temperatures. The AC electrical conductivity test revealed that the conduction depended both on the frequency and the temperature. Photoconductivity study was carried out in order to ascertain the positive photoconductivity of the TiO 2 thin films. The study of semiconducting thin films is being pursued with growing interest on account of their established and useful applications in many semiconductor devices such as solar energy converters, optoelectronics devices etc 1. In the recent decades, there has been an enormous deal of attention being bestowed upon the making of inexpensive thin films, due to their high varying characteristics.
When the films were annealed the phase transformed to single anatase phase of the TiO 2 films. The energy band gap value was found to change with annealing temperature. An enhancement of luminescence intensity is found due to change in the crystalline environment and reduction in oxygen amount with temperature. This is a preview of subscription content, access via your institution.
Abstract The Cu2O thin film was deposited onto spin coated TiO2 thin layer by electro-deposition method. The crystallographic structure of the thin film was studied by X-ray diffraction XRD. XRD measurement showed that the film was crystallized in the cubical phase and the average crystallite size was found to be The grain size of the thin film was studied by scanning electron microscope SEM. Optical properties such as refractive index n and extinction coefficient k were determined from transmittance spectrum with SHIMADZU UV- spectrophotometer by using envelope method.
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